ÇETİNKAYA, H. G. Et Al. 2019. The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics. Physica B: Condensed Matter , vol.560 , 91-96.

ÇETİNKAYA, H. G., Sevgili, Ö., & ALTINDAL, Ş., (2019). The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics. Physica B: Condensed Matter , vol.560, 91-96.

ÇETİNKAYA, HAYRİYE, ÖMER SEVGİLİ, And ŞEMSETTİN ALTINDAL. "The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics," Physica B: Condensed Matter , vol.560, 91-96, 2019

ÇETİNKAYA, HAYRİYE G. Et Al. "The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics." Physica B: Condensed Matter , vol.560, pp.91-96, 2019

ÇETİNKAYA, H. G. Sevgili, Ö. And ALTINDAL, Ş. (2019) . "The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics." Physica B: Condensed Matter , vol.560, pp.91-96.

@article{article, author={HAYRİYE GÖKÇEN ÇETİNKAYA Et Al. }, title={The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics}, journal={Physica B: Condensed Matter}, year=2019, pages={91-96} }