The Effect Of The Rare-Earth Elements Doped Interface On The Frequency-Dependent Electrical Characteristics Of Al/p-Si Schottky Diode

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SEVGİLİ Ö.

ISARC 2. INTERNATIONAL GOBEKLITEPE SCIENTIFIC STUDIES CONGRESS, Turkey, 20 March 2021, (Summary Text)

• Publication Type: Conference Paper / Summary Text
• Country: Turkey
• Kütahya Health Sciences University Affiliated: No