Effect of SbI3 on electrical properties in metal-insulator-semiconductor (MIS) structure
Physica B: Condensed Matter, vol.716, 2025 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 716
- Publication Date: 2025
- Doi Number: 10.1016/j.physb.2025.417654
- Journal Name: Physica B: Condensed Matter
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
- Keywords: Electrical properties, SbI3, Structural analyzes
- Kütahya Health Sciences University Affiliated: Yes
Abstract
Al/p-Si and Al/SbI3/p-Si were fabricated to understand the effect on electric properties of the interfacial layer (SbI3). The electrical performances of these diodes are studied using current-voltage (I-V) and impedance measurements. The values of the reverse saturation current (I0), series resistance (Rs), shunt resistance (Rsh), and rectification ratio (RR) of the diodes were examined using the TE methods. The Rs profiles of these diodes were analyzed via Ohm's Law, Norde Method, Cheung&Cheung Method and Nicollian-Brews method whereas the Nss was examined using CHF-CLF method. Structural analyzes of the interface layer were performed utilize XRD, EDX and SEM. These experimental results are discussed in detail to provide insight into the effects of the SbI3 on the electrical parameters of the device.