Simulation and experimental measurement of radon activity using a multichannel silicon-based radiation detector

Ozdemir F. B., Selcuk A., Özkorucuklu S., Alpat A., Ozdemir T., Ӧzek N.

Applied Radiation and Isotopes, vol.135, pp.61-66, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 135
  • Publication Date: 2018
  • Doi Number: 10.1016/j.apradiso.2018.01.016
  • Journal Name: Applied Radiation and Isotopes
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.61-66
  • Keywords: Geant4, Radiation, Rn-222, Root, Semiconductor, Silicon detector
  • Kütahya Health Sciences University Affiliated: No


In this study, high-precision radiation detector (HIPRAD), a new-generation semiconductor microstrip detector, was used for detecting radon (Rn-222) activity. The aim of this study was to detect radon (Rn-222) activity experimentally by measuring the energy of particles in this detector. Count-ADC channel, eta-charge, and dose–response values were experimentally obtained using HIPRAD. The radon simulation in the radiation detector was theoretically performed using the Geant4 software package. The obtained radioactive decay, energy generation, energy values, and efficiency values of the simulation were plotted using the root program. The new-generation radiation detector proved to have 95% reliability according to the obtained dose–response graphs. The experimental and simulation results were found to be compatible with each other and with the radon decays and literature studies.