Investigation and comparison of various properties of diodes made using PTCDA and its synthesized ligand and brominated derivative


Uzun İ., Orak İ., SEVGİLİ Ö., Karakaplan M.

Materials Science and Engineering: B, cilt.317, 2025 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 317
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.mseb.2025.118147
  • Dergi Adı: Materials Science and Engineering: B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Electrical and photoelectrical properties, Photodiode, PTCDA, Spectroscopic techniques, Synthesis
  • Kütahya Sağlık Bilimleri Üniversitesi Adresli: Evet

Özet

First, the ligand (PTC) and brominated derivative (Br2PTCDA) of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA), whose structures were confirmed by FTIR and 1H NMR spectra, were synthesized. Then, three new diodes were made using PTCDA, PTC, and Br2PTCDA as interface layers. The current–voltage (I–V) graphs of the diodes were determined for both dark environment and environments exposed to different illumination intensities (DIIs). The ideality factor (n) and rectification ratio (RR) values of Al/PTCDA/p-Si, Al/PTC/p-Si, and Al/Br2PTCDA/p-Si diodes for dark environment were determined as 2.243 and 365.51, 2.333 and 152.55, and 2.941 and 20.5, respectively. The n and RR values show that the Al/PTCDA/p-Si diode is both more ideal and more efficient than the other two diodes. The n values ​​obtained for environments under DIIs (30, 40, 60, 80, and 100 mW cm−2) also showed that the Al/PTCDA/p-Si diode is more ideal than the other diodes, provided that the illumination intensity is the same.