Investigation and comparison of various properties of diodes made using PTCDA and its synthesized ligand and brominated derivative

Uzun İ., Orak İ., SEVGİLİ Ö., Karakaplan M.

Materials Science and Engineering: B, vol.317, 2025 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 317
  • Publication Date: 2025
  • Doi Number: 10.1016/j.mseb.2025.118147
  • Journal Name: Materials Science and Engineering: B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Electrical and photoelectrical properties, Photodiode, PTCDA, Spectroscopic techniques, Synthesis
  • Kütahya Health Sciences University Affiliated: Yes

Abstract

First, the ligand (PTC) and brominated derivative (Br2PTCDA) of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA), whose structures were confirmed by FTIR and 1H NMR spectra, were synthesized. Then, three new diodes were made using PTCDA, PTC, and Br2PTCDA as interface layers. The current–voltage (I–V) graphs of the diodes were determined for both dark environment and environments exposed to different illumination intensities (DIIs). The ideality factor (n) and rectification ratio (RR) values of Al/PTCDA/p-Si, Al/PTC/p-Si, and Al/Br2PTCDA/p-Si diodes for dark environment were determined as 2.243 and 365.51, 2.333 and 152.55, and 2.941 and 20.5, respectively. The n and RR values show that the Al/PTCDA/p-Si diode is both more ideal and more efficient than the other two diodes. The n values ​​obtained for environments under DIIs (30, 40, 60, 80, and 100 mW cm−2) also showed that the Al/PTCDA/p-Si diode is more ideal than the other diodes, provided that the illumination intensity is the same.