Research Information System
Sensors and Actuators A: Physical, vol.382, 2025 (SCI-Expanded)
In this study, we used an extraction obtained naturally from Stachys lavandulifolia Vahl. (StLa) to fabricate Al/StLa/p-Si plant-based (PB) photodiode. The optical, structural, and the optoelectronic properties of PB photodiode were investigated. The band gap (Eg) of StLa was determined to be 3.2 eV from UV–vis measurements. The arithmetic means of the surface height deviations of StLa were found to be about 0.20–0.30 nm by AFM. The J-V characteristics of the fabricated photodiode were investigated in the dark and under different illumination intensities in the range of 30–100 mW.cm−2. The ideality factor (n), saturation current (I0), barrier height (ΦB0) and rectification rate (RR) of the fabricated PB photodiode in dark were found to be 1.43, 1.52 × 10−10 A, 0.829 eV and 2.5 × 105, respectively. In addition, the spectral sensitivity (SR), detectivity (D*), noise equivalent power (NEP) and the spectral external quantum efficiency (EQE) of the fabricated PB photodiode under UV-A lamp with 350 nm wavelength were found to be 0.109 A/W, 9.39 × 1011 Jones, 0.943x10−13 W.Hz−1/2 and 0.37, respectively. The capacitance (C)-voltage (V) and conductance (G/ω)-voltage (V) measurements of the PB photodiode were carried out in the range of 5 kHz to 5000 kHz from −2–3 V. All these results show that the PB photodiode has a high potential for use in electronic and optoelectronic applications.